| PART |
Description |
Maker |
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V7177 |
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
|
Mitsubishi
|
| 2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP
VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| LT5522EUF LT5522EUFTR |
600MHz to 2.7GHz High Signal Level Downconverting Mixer; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 125°C TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC16
400MHz to 2.7GHz High Signal Level Downconverting Mixer
|
Linear Technology, Corp.
|
| SZA2044ZPCK-EVB2 SZA2044ZSQ |
700MHz to 2.7GHz 5V 1W Power Amplifier
|
RF Micro Devices
|
| SZM-2066Z SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EV |
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
|
RF Micro Devices
|
| TD7626F01 |
2.7GHz FREQUENCY SYNTHESIZER FOR SATELLITE TV
|
Toshiba Semiconductor
|
| LT550409 LT5504-15 |
800MHz to 2.7GHz RF Measuring Receiver
|
Linear Technology
|
